ds99236(10/04) features ? international standard package ? guaranteed short circuit soa capability ? low v ce(sat) - for low on-state conduction losses ? high current handling capability ? mos gate turn-on - drive simplicity ? fast fall time for switching speeds up to 20 khz applications ? ac motor speed control ? uninterruptible power supplies (ups) ? welding advantages ? high power density ixsh 10n60b2d1 ixsq 10n60b2d1 high speed igbt with diode short circuit soa capability symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c20a i c110 t c = 110 c10a i f(110) 11 a i cm t c = 25 c, 1 ms 30 a ssoa v ge = 15 v, t j = 125 c, r g = 82 ? i cm = 20 a (rbsoa) clamped inductive load, v ge = 20 v @ 0.8 v ces t sc v ge = 15 v, v ce = 360 v, t j = 125 c 10 s (scsoa) r g = 150 ?, non repetitive p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.3/10 nm/lb. in weight to-247 5 g to-3p 5 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 750 a, v ce = v ge 4.0 7.0 v i ces v ce = v ces 75 a v ge = 0 v 200 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 10a, v ge = 15 v 2.5 v preliminary data sheet v ces = 600 v i c25 =20a v ce(sat) = 2.5 v g = gate c = collector e = emitter tab = collector to-247 (ixsh) d1 ? 2004 ixys all rights reserved g c e to-3p (ixsq) (tab) (tab) g e c
ixsh 10n60b2d1 ixsq 10n60b2d1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 10a; v ce = 10 v, note 1 2.0 3.6 s c ies 400 pf c oes v ce = 25 v, v ge = 0 v 50 pf f = 1 mhz c res 11 pf q g 17 nc q ge i c = 10a, v ge = 15 v, v ce = 0.5 v ces 6nc q gc 7.5 nc t d(on) 30 ns t ri 30 ns t d(off) 180 ns t fi 165 ns e off 430 750 j t d(on) 30 ns t ri 30 ns e on 0.32 mj t d(off) 260 ns t fi 270 ns e off 790 j r thjc 1.25 k/w r thcs 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10a, v ge = 0 v t j =150 c 1.66 v 2.66 v i rm i f = 12a, v ge = 0 v, -di f /dt = 100 a/ s t j = 100 c 1.5 a t rr v r = 100 v t j = 100 c90 ns t rr i f = 1 a; -di/dt = 100 a/ s; v r = 30 v 25 ns r thjc 2.5 k/w inductive load, t j = 25 c i c = 10a, v ge = 15 v v ce = 0.8 v ces , r g = 30 ? switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = 10 a, v ge = 15 v v ce = 0.8 v ces , r g = 30 ? switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g note 1: pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixys reserves the right to change limits, test conditions, and dimensions. to-247 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-3p outline terminals: 1 - gate 2 - drain 3 - source tab - drain
fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 012345678910 v c e - volts i c - amperes v ge = 17v 9v 11v 13v 15v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 17v 9v 7v 11v 13v 15v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 0.511.522.533.544.5 v c e - volts i c - amperes v ge = 17v 9v 11v 13v 15v fig. 4. dependence of v ce( sat ) on temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 10a i c = 5a v ge = 15v i c = 20a fig. 5. collector-to-em itter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 10 11 12 13 14 15 16 17 18 19 v g e - volts v c e - volts t j = 25 o c i c = 20a 10a 5a fig. 6. input adm ittance 0 2 4 6 8 10 12 14 16 18 6 7 8 9 10 11 12 13 14 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c ixsh 10n60b2d1 ixsq 10n60b2d1
ixsh 10n60b2d1 ixsq 10n60b2d1 fig. 7. transconductance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 101214161820 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 50 100 150 200 250 300 350 400 450 500 r g - ohms e o f f - millijoules i c = 5a t j = 125 o c v ge = 15v v ce = 480v i c = 10a i c = 20a fig. 9. dependence of turn-off energy loss on i c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 4 6 8 10 12 14 16 18 20 i c - amperes e o f f - millijoules r g = 30 ? v ge = 15v v ce = 480v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 20a r g = 30 ? v ge = 15v v ce = 480v i c = 10a i c = 5a fig. 11. dependence of turn-off sw itching tim e on r g 150 200 250 300 350 400 450 500 550 600 650 700 0 50 100 150 200 250 300 350 400 450 500 550 r g - ohms switching time - nanoseconds i c = 5a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 480v i c = 10a i c = 20a i c = 5 a fig. 12. dependence of turn-off sw itching tim e on i c 120 140 160 180 200 220 240 260 280 300 320 340 4 6 8 10 1214161820 i c - amperes switching time - nanoseconds t d(off) t fi - - - - - - r g = 30 ? v ge = 15v v ce = 480v t j = 125 o c t j = 25 o c
fig. 14. gate charge 0 2 4 6 8 10 12 14 16 024681012141618 q g - nanocoulombs v g e - volts v ce = 300v i c = 10a i g = 10ma fig. 15. capacitance 1 10 100 1000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 120 140 160 180 200 220 240 260 280 300 320 340 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds t d(off) t fi - - - - - - r g = 30 ? v ge = 15v v ce = 480v i c = 5a 20a i c = 10a i c = 20a 5a fig. 16. reverse-bias safe ope r ating ar e a 0 2 4 6 8 10 12 14 16 18 20 22 100 150 200 250 300 350 400 450 500 550 600 v c e - volts i c - amperes t j = 125 o c r g = 82 ? dv/dt < 10v/ns fig. 17. maxim um transient therm al resistance 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - ( oc / w ) ixsh 10n60b2d1 ixsq 10n60b2d1
ixsh 10n60b2d1 ixsq 10n60b2d1 ixys mosfets and igbts are covered by 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,381,025 6,162,665 6,306,728 b1 6,534,343 6,683,344 one or moreof the following u.s. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,486,715 6,259,123 b1 6,404,065 b1 6,583,505 6,710,405b2 ixys reserves the right to change limits, test conditions, and dimensions. fig. 20. peak reverse current i rm versus -di f /dt fig. 19. reverse recovery charge q r versus -di f /dt fig. 18. forward current i f versus v f fig. 21. dynamic parameters q r , i rm versus t vj fig. 22. recovery time t rr versus -di f /dt fig. 23. peak forward voltage v fr and t fr versus di f /dt fig. 24. transient thermal resistance junction-to-case constants for z thjc calculation: ir thi (k/w) t i (s) 1 1.449 0.0052 2 0.5578 0.0003 3 0.4931 0.0169 note: fig. 19 to fig. 23 shows typical values 200 600 1000 0400800 40 60 80 100 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 04080120160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 20 40 60 0.0 0.1 0.2 0.3 v fr di f /dt v 200 600 1000 0400800 0 2 4 6 8 10 100 1000 0 50 100 150 200 250 0123 0 5 10 15 20 25 30 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s t vj = 150c t vj = 100c t vj = 25c i rm q r v fr t vj = 100c v r = 300 v t vj = 100c v r = 300 v t vj = 100c v r = 300 v dsep 8-06b t fr i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a i f = 5 a i f = 10 a i f = 20 a t vj = 100c i f = 10 a
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